The outer layers are created with layers much greater in thickness compared to the p- or n- type sandwiched materials. For this the emitter side layer is doped more significantly compared to the base side which is doped less significantly. We have already learned how in BJTs DC biasing become essential for establishing the required operational region and for AC amplification. The first type is called an NPN transistor, while the second variant is named as the PNP type of transistor.īoth of these types could be visualized in the figure 3.2 with appropriate DC biasing. TRANSISTOR CONSTRUCTIONĪ transistor is basically a device built with 3 layer of semiconductor material in which either 2 n- type and a single p- type layer of material is used or 2 p- type and a single n- type layer of material is used. The positive aspects of this 3 pin solid-state unit in contrast to the tube were instantly noticeable: It turned out to be much smaller, could work without an "heater" or heating losses, was unbreakable and strong, was more efficient in terms of power usage, could be stored and accessed with ease, didn't require any initial warming start up, and it worked at much lower operating voltages. The very first transistor (which was in the form of a point-contact transistor) is demonstrated in Fig. Brattain and John Bardeen exhibited and proved the amplifying function of the very first transistor at the Bell Telephone Laboratories. It turned out on the mid-day that Walter H. On December 23, 1947, however, the electronics industry was going witness the arrival of an absolutely brand new "direction of interest" and improvement.
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